27 September 2011 Etch pit density in single crystal CdZnTe and CdTe correlated with growth parameters
Author Affiliations +
Abstract
Surface dislocations were revealed in single crystal CdZnTe and CdTe samples using chemical etching. Dislocation etch pits on the Te dominant (111)B face were studied under optical, infrared and scanning electron microscopes. The samples came from crystal ingots which were grown using different chemical compositions and applied growth parameters. From these ingots, etch pit density, shape and distribution were examined and compared with the varying growth techniques. Resistivity and mobility-lifetime product, μτe, properties of the detectors were measured. A combination of detector grade and non-detector grade ingots were tested. Near infra-red microscopy was used to compare the amount of secondary phases present in the bulk of the crystals with dislocation etch pits on their surface.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cody J. Havrilak, Cody J. Havrilak, Kelly A. Jones, Kelly A. Jones, Kelvin G. Lynn, Kelvin G. Lynn, } "Etch pit density in single crystal CdZnTe and CdTe correlated with growth parameters", Proc. SPIE 8142, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII, 81421A (27 September 2011); doi: 10.1117/12.895537; https://doi.org/10.1117/12.895537
PROCEEDINGS
10 PAGES


SHARE
RELATED CONTENT

The status of MCT detector development at ASELSAN
Proceedings of SPIE (May 13 2018)
Long-term room temperature stability of TlBr gamma detectors
Proceedings of SPIE (September 27 2011)
Chemical etching of CdTe and CdxHg1 xTe in the H2O2...
Proceedings of SPIE (April 13 2003)
Study of polishing of HgCdTe wafers
Proceedings of SPIE (September 08 2011)
Progress in development on CdZnTe x-ray detector
Proceedings of SPIE (February 22 2006)

Back to Top