Carrier transportation properties in M-p-n and Schottky CdTe diode detector

Manato Kimura; Akifumi Koike; Takaharu Okunoayama; Hisashi Morii; Shailendra Singh; Toshitaka Yamakawa; Hidenori Mimura; Toru Aoki

doi:10.1117/12.896969

27 September 2011 Carrier transportation properties in M-p-n and Schottky CdTe diode detector

Manato Kimura, Akifumi Koike, Takaharu Okunoayama, Hisashi Morii, Shailendra Singh, Toshitaka Yamakawa, Hidenori Mimura, Toru Aoki

Author Affiliations +

Proceedings Volume 8142, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII; 81421D (2011) https://doi.org/10.1117/12.896969
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

The photon counting CdTe detector by using pulse rise height for high count rate detection was developed. The detector can measure not only pulse rise height for energy estimation but also pulse rise time. The energy spectrum after polarization in high bias voltage and before polarization in low bias voltage was so similar, but the pulse rise time was difference. In this paper, we have compared polarization properties of M-p-n type CdTe diode and Schottky one. We will estimate changing internal electric field by using this measurement.

Citation Download Citation

Manato Kimura, Akifumi Koike, Takaharu Okunoayama, Hisashi Morii, Shailendra Singh, Toshitaka Yamakawa, Hidenori Mimura, and Toru Aoki "Carrier transportation properties in M-p-n and Schottky CdTe diode detector", Proc. SPIE 8142, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII, 81421D (27 September 2011); https://doi.org/10.1117/12.896969

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