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27 September 2011 Carrier transportation properties in M-p-n and Schottky CdTe diode detector
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The photon counting CdTe detector by using pulse rise height for high count rate detection was developed. The detector can measure not only pulse rise height for energy estimation but also pulse rise time. The energy spectrum after polarization in high bias voltage and before polarization in low bias voltage was so similar, but the pulse rise time was difference. In this paper, we have compared polarization properties of M-p-n type CdTe diode and Schottky one. We will estimate changing internal electric field by using this measurement.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manato Kimura, Akifumi Koike, Takaharu Okunoayama, Hisashi Morii, Shailendra Singh, Toshitaka Yamakawa, Hidenori Mimura, and Toru Aoki "Carrier transportation properties in M-p-n and Schottky CdTe diode detector", Proc. SPIE 8142, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII, 81421D (27 September 2011);

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