Lithium and boron based semiconductors for thermal neutron counting

Alireza Kargar; Joshua Tower; Huicong Hong; Leonard Cirignano; William Higgins; Kanai Shah

doi:10.1117/12.899363

27 September 2011 Lithium and boron based semiconductors for thermal neutron counting

Alireza Kargar, Joshua Tower, Huicong Hong, Leonard Cirignano, William Higgins, Kanai Shah

Author Affiliations +

Proceedings Volume 8142, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII; 81421P (2011) https://doi.org/10.1117/12.899363
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

Thermal neutron detectors in planar configuration were fabricated from LiInSe₂ and B₂Se₃ crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. Pulse height spectra were collected from ²⁴¹AmBe (neutron source on all samples), as well as ¹³⁷Cs and ⁶⁰Co gamma ray sources. In this study, the resistivity of all crystals is reported and the collected pulse height spectra are presented for fabricated devices. Note that, the ²⁴¹AmBe neutron source was custom designed with polyethylene around the source as the neutron moderator, mainly to thermalize the fast neutrons before reaching the detectors. Both LiInSe₂ and B₂Se₃ devices showed response to thermal neutrons of the ²⁴¹AmBe source.

Citation Download Citation

Alireza Kargar, Joshua Tower, Huicong Hong, Leonard Cirignano, William Higgins, and Kanai Shah "Lithium and boron based semiconductors for thermal neutron counting", Proc. SPIE 8142, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII, 81421P (27 September 2011); https://doi.org/10.1117/12.899363

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