27 September 2011 Lithium and boron based semiconductors for thermal neutron counting
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Thermal neutron detectors in planar configuration were fabricated from LiInSe2 and B2Se3 crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. Pulse height spectra were collected from 241AmBe (neutron source on all samples), as well as 137Cs and 60Co gamma ray sources. In this study, the resistivity of all crystals is reported and the collected pulse height spectra are presented for fabricated devices. Note that, the 241AmBe neutron source was custom designed with polyethylene around the source as the neutron moderator, mainly to thermalize the fast neutrons before reaching the detectors. Both LiInSe2 and B2Se3 devices showed response to thermal neutrons of the 241AmBe source.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alireza Kargar, Alireza Kargar, Joshua Tower, Joshua Tower, Huicong Hong, Huicong Hong, Leonard Cirignano, Leonard Cirignano, William Higgins, William Higgins, Kanai Shah, Kanai Shah, "Lithium and boron based semiconductors for thermal neutron counting", Proc. SPIE 8142, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII, 81421P (27 September 2011); doi: 10.1117/12.899363; https://doi.org/10.1117/12.899363


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