Design of integrated readout circuit with enhanced capacitance mechanism for dual-band infrared detector

Tai-Ping Sun; Yi-Chuan Lu; Hsiu-Li Shieh; Shiuan-Shuo Shiu; Yi-Ting Liu; Shiang-Feng Tang; Wen-Jen Lin

doi:10.1117/12.894337

16 September 2011 Design of integrated readout circuit with enhanced capacitance mechanism for dual-band infrared detector

Tai-Ping Sun, Yi-Chuan Lu, Hsiu-Li Shieh, Shiuan-Shuo Shiu, Yi-Ting Liu, Shiang-Feng Tang, Wen-Jen Lin

Author Affiliations +

Proceedings Volume 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II; 815505 (2011) https://doi.org/10.1117/12.894337
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

This study proposes a solution for an excessive dark current by a sharing capacitor, which avoids output signal distortion due to integration voltage saturation. Integration capacitance can be changed by adding a switch in the pixel circuit, which will increase the capacitance by two times the original. This circuit also provides output functions of either single-band or dual-band by switching to different sensor. This integrated readout circuit design adopts the TSMC 0.35um 2P4M CMOS 5V process, run on a 5V power supply and operated at a 3MHz clock rate. The dual-band pixel circuit uses an interlace structure, the pixel circuit areas of the two wavelengths are both 30um x 30um. The mid-wave and long-wave sensor currents are from 1nA to 2nA and 6nA to 8nA, respectively, and output swing is 2.8V.

Citation Download Citation

Tai-Ping Sun, Yi-Chuan Lu, Hsiu-Li Shieh, Shiuan-Shuo Shiu, Yi-Ting Liu, Shiang-Feng Tang, and Wen-Jen Lin "Design of integrated readout circuit with enhanced capacitance mechanism for dual-band infrared detector", Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 815505 (16 September 2011); https://doi.org/10.1117/12.894337

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