16 September 2011 Ge on Si and InP/InGaAs single photon avalanche diodes
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This paper describes single photon detection for Ge on Si separate-absorption-charge-multiplication (SACM) avalanche photodiodes and advances in quenching for InP/InGaAs single photon avalanche diodes.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhiwen Lu, Zhiwen Lu, Wenlu Sun, Wenlu Sun, Chong Hu, Chong Hu, Archie Holmes, Archie Holmes, Joe C. Campbell, Joe C. Campbell, Yimin Kang, Yimin Kang, Han-Din Liu, Han-Din Liu, } "Ge on Si and InP/InGaAs single photon avalanche diodes", Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 81551E (16 September 2011); doi: 10.1117/12.894533; https://doi.org/10.1117/12.894533

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