The natures of most radiation-induced point defects in amorphous silicon dioxide (a-SiO2) are well known on the basis
of 55 years of electron spin resonance (ESR) and optical studies of pure and doped silica in bulk, thin-film, and fiberoptic
forms. The self-trapped holes (STHs), discovered only in 1989, appear to be responsible for most radiationinduced
red/near-IR optical absorption in silica-based photonics. However, accelerated testing of a-SiO2-based devices
slated for space applications must take into account the highly supralinear dependence of the initial STH creation rate on
ionizing dose rate...and the possibility to permanently reduce the created numbers of STHs by high-dose pre-irradiation.
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