We present our efforts on development of high performance low noise, long-wave infrared (LWIR)
and multicolor detectors based on the InAs/GaSb strained layer material (SLS) material system. The LWIR
SLS detector with PbIbN architecture showed improved performance over the conventional PIN design due to
unipolar current blocking layers. At 77K and Vb=-0.25V, a responsivity of 1.8 A/W, dark current density of
1.2 mA/cm2, quantum efficiency of 23% and shot noise limited detectivity (D*) of 8.7×1010 Jones (λc = 10.8
μm) has been observed. Dual band response was registered with 50% cut-off wavelengths of 5μm and 10μm
from an SLS detector with the pBp design. The responsivity equal to 1.6 A/W (at λ = 5 μm and Vb = +0.4 V)
and 1.8 A/W (at λ = 9 μm and Vb = -0.7 V) for MWIR and LWIR absorbers was achieved with corresponding
values of specific detectivity 5 x 1011 Jones and 2.6 x 1010 Jones, respectively. The maximum values of
quantum efficiency were estimated to 41% (MWIR) and 25% (LWIR) at Vb = +0.4V and Vb = -0.7V.
Moreover, the diffusion-limited behavior of dark current at higher temperatures was observed for the MWIR
absorber for pBp detector. Finally, three-color response was registered from three contact device with nBn
architecture for SWIR and MWIR and heterojunction PIbN architecture for LWIR detection (NbNbiP). At
77K, the cut-off wavelength for SWIR, MWIR and LWIR regions have been observed as 3.0 μm, 4.7 μm, and
10.1 μm respectively. At the same temperature, D* of 1.4 × 1010 Jones, 1.8 × 1010 Jones and 1.5 × 109 Jones
for SWIR, MWIR and LWIR signals has been observed.