13 October 2011 Printability of native blank defects and programmed defects and their stack structures
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Abstract
We describe the characterization of native phase defects in the manufacturing of extreme ultraviolet (EUV) mask blanks using the state-of-the-art mask metrology equipment in SEMATECH's Mask Blank Development Center (MBDC). We used commercially available quartz substrates and deposited Mo/Si multilayers on the substrates to characterize phase defects. We also prepared programmed defects of various dimensions using e-beam patterning technology on which multilayers were deposited. Transmission electron microscopy (TEM) was used to study multilayer profile changes, while SEMATECH's actinic inspection tool (AIT) was used to image defects and predict their printability. Defect images at different focal depths of the AIT are correlated to TEM cross sections and atomic force microscopy (AFM) dimensions. The printability of native and programmed defects was also investigated.
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Hyuk Joo Kwon, Hyuk Joo Kwon, Jenah Harris-Jones, Jenah Harris-Jones, Ranganath Teki, Ranganath Teki, Aaron Cordes, Aaron Cordes, Toshio Nakajima, Toshio Nakajima, Iacopo Mochi, Iacopo Mochi, Kenneth A. Goldberg, Kenneth A. Goldberg, Yuya Yamaguchi, Yuya Yamaguchi, Hiroo Kinoshita, Hiroo Kinoshita, } "Printability of native blank defects and programmed defects and their stack structures", Proc. SPIE 8166, Photomask Technology 2011, 81660H (13 October 2011); doi: 10.1117/12.897165; https://doi.org/10.1117/12.897165
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