13 October 2011 Holistic lithography for EUV: NXE:3100 characterization of first printed wafers using an advanced scanner model and scatterometry
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Abstract
In this paper we will present ASML's holistic approach to lithography for EUV. This total approach combines the various components needed to achieve the correct on-product demands of our customers in terms of patterning fidelity across the entire image field and across the entire wafer. We will start giving a general update on ASML's NXE scanner platform of which the 6th NXE:3100 systems is now being shipped to a leading chipmaker. The emphasis will be on wafer imaging results for various applications such as flash memory and logic's SRAM. Then we will describe the second holistic component, NXE-computational lithography, which was developed to speed-up early learning on EUV and to achieve high accuracy on the wafers. Thirdly, the YieldStar angular-resolved scatterometry tool that supports the scanner's stability was used to characterize the system and calibrate the models. The wafer-results reveal in detail predicted imaging effects of NXE lithography and allow a calibration of system parameters and characterization of hardware components. We will demonstrate mask-induced imaging effects and propose an improvement of the current EUV blank or mask-making processes.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank A. J. M. Driessen, Frank A. J. M. Driessen, Natalia Davydova, Natalia Davydova, J. Jiang, J. Jiang, H. Kang, H. Kang, V. Vaenkatesan, V. Vaenkatesan, D. Oorschot, D. Oorschot, I. S. Kim, I. S. Kim, S. N. Kang, S. N. Kang, Y. Lee, Y. Lee, J. Yeo, J. Yeo, K. Gronlund, K. Gronlund, H. Y. Liu, H. Y. Liu, K. van Ingen-Schenau, K. van Ingen-Schenau, R. Peeters, R. Peeters, C. Wagner, C. Wagner, J. Zimmermann, J. Zimmermann, O. Schumann, O. Schumann, } "Holistic lithography for EUV: NXE:3100 characterization of first printed wafers using an advanced scanner model and scatterometry", Proc. SPIE 8166, Photomask Technology 2011, 81660Z (13 October 2011); doi: 10.1117/12.898955; https://doi.org/10.1117/12.898955
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