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24 January 2012 Study of EUV mask e-beam inspection conditions for HVM
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Abstract
Extreme ultraviolet (EUV) e-beam patterned mask inspection (EBPMI) has been proposed by Applied Materials as a cost-effective solution for high volume manufacturing (HVM) in mask shops and fabs. Electron beam inspection technology is currently available for wafers. A recent publication described a successful sensitivity study of EUVs mask using a technology demonstration platform. Here we present a new study using extreme e-beam conditions to show the feasibility of using EBPMI in HVM. We examine potential changes in the reflectivity at the EUV wavelength after exposure to high e-beam currents, demonstrating that reflectivity does not change due to e-beam scanning. We therefore conclude that under the conditions tested, which include typical as well as extreme conditions, there is no evidence of mask damage.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shmoolik Mangan, C. C. Lin, Greg Hughes, Ran Brikman, Alex Goldenshtein, Vladislav Kudriashov, Alon Litman, Lior Shoval, and Ilan Englard "Study of EUV mask e-beam inspection conditions for HVM", Proc. SPIE 8166, Photomask Technology 2011, 816612 (24 January 2012); https://doi.org/10.1117/12.899067
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