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13 October 2011 Advanced electron beam resist requirements and challenges
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Abstract
As photomask minimum feature size requirements continue to shrink, resist resolution limitations and their tradeoffs with exposure dose are critical factors. Recently, nearly every node needs a new electron beam resist, customized for exposure dose requirements while simultaneously meeting resolution specifications. Intel Mask Operations has an active program focused on screening new electron beam resists and processes. We discuss the performance metrics we use to evaluate materials and discuss the relative capabilities of the latest resists. We present fundamental resist metrics (resolution, LER and dose) as well as manufacturing process sensitivities.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew Jamieson, Yong Kwan Kim, Bennett Olson, Maiying Lu, and Nathan Wilcox "Advanced electron beam resist requirements and challenges", Proc. SPIE 8166, Photomask Technology 2011, 816616 (13 October 2011); https://doi.org/10.1117/12.898901
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