13 October 2011 Evaluation of KLA-Tencor LMS IPRO5 beta system for 22nm node registration and overlay applications
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Abstract
Using various technical tricks, 193nm lithography has been pushed for the 22nm logic node. For optical and EUV lithography, the International Technology Roadmap for Semiconductors (ITRS [1]) requests a registration error below 3.8 nm for masks for single-patterning layers. Double patterning further reduces the tolerable pattern placement error to < 2.7 nm for each mask of a pair that forms one layer on the wafer. For mask metrology on the 2x node, maintaining a precision-to-tolerance (P/T) ratio of 0.25 will be challenging. The total measurement uncertainty has to be significantly below 1.0nm. In this work, results obtained during the LMS IPRO5 beta system evaluation are presented. LMS IPRO5 beta system evaluation is part of the CDUR32 project, funded by the German Federal Ministry of Education and Research. A major improvement to previous LMS IPRO generations is the new laser illumination system, which significantly improves optical resolution and contrast (especially on EUV substrates). Therefore, optical resolution and measurement capability are evaluated using standard registration targets, in-die wafer overlay targets, and arbitrary shaped features on different substrates comprising EUV and binary MoSi masks. Position measurement uncertainty for the new center of gravity (CofG) measurement algorithm, important for in-die measurement capability, is evaluated. The results are compared with results obtained using the traditional edge detection algorithm.
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M. Ferber, M. Ferber, F. Laske, F. Laske, K.-D. Röth, K.-D. Röth, D. Adam, D. Adam, } "Evaluation of KLA-Tencor LMS IPRO5 beta system for 22nm node registration and overlay applications", Proc. SPIE 8166, Photomask Technology 2011, 81661F (13 October 2011); doi: 10.1117/12.896850; https://doi.org/10.1117/12.896850
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