14 October 2011 EUVL mask inspection using 193nm wavelength for 30nm node and beyond
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Proceedings Volume 8166, Photomask Technology 2011; 81661H (2011); doi: 10.1117/12.898896
Event: SPIE Photomask Technology, 2011, Monterey, California, United States
Abstract
We report inspection results of EUVL masks with 193nm wavelength tools for 30nm and 24nm half-pitch nodes. The dense line and space and contact pattern is considered to study inspection capability. The evaluation includes defect contrast variation depending on illumination conditions, defect types, and design nodes. We show many inspection images with various optic conditions. Consequently, the detection sensitivity is affected by contrast variation of defects. The detection sensitivity and wafer printability are addressed with a programmed defect mask and a production mask. With these results, we want to discuss the capability of current EUVL mask inspection tools and the future direction.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jihoon Na, Wonil Cho, Tae-Geun Kim, In-Yong Kang, Byungcheol Cha, Inkyun Shin, Han-Ku Cho, "EUVL mask inspection using 193nm wavelength for 30nm node and beyond", Proc. SPIE 8166, Photomask Technology 2011, 81661H (14 October 2011); doi: 10.1117/12.898896; https://doi.org/10.1117/12.898896
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KEYWORDS
Photomasks

Inspection

Semiconducting wafers

Extreme ultraviolet lithography

Modulation

Defect detection

Scanning electron microscopy

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