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13 October 2011 Effect of SPM-based cleaning POR on EUV mask performance
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Abstract
EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. The fact that a pellicle is not used to protect the mask surface in EUV lithography suggests that EUV masks may have to undergo more cleaning cycles during their lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality and patterning performance during 30 cycles of Samsung's EUV mask SPM-based cleaning and 20 cycles of SEMATECH ADT exposure. We have observed that the quality and patterning performance of EUV masks does not significantly change during these processes except mask pattern CD change. To resolve this issue, we have developed an acid-free cleaning POR and substantially improved EUV mask film loss compared to the SPM-based cleaning POR.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaehyuck Choi, Han-shin Lee, Jinsang Yoon, Takeya Shimomura, Alex Friz, Cecilia Montgomery, Andy Ma, Frank Goodwin, Daehyuk Kang, Paul Chung, Inkyun Shin, and H. Cho "Effect of SPM-based cleaning POR on EUV mask performance", Proc. SPIE 8166, Photomask Technology 2011, 81661M (13 October 2011); https://doi.org/10.1117/12.896836
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