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13 October 2011 Effect of repetitive acid-based cleaning on EUV mask lifetime and lithographic performance
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Abstract
In this study, the impact of repetitive cleaning of EUV masks on reflectivity, surface roughness and lithographic performance was evaluated. Two masks were fabricated and patterned with the same layout using commercially available EUV blanks; one was subjected to 33 cleaning cycles and the other was kept as a reference. Wafers were patterned using both masks on the SEMATECH Berkeley 0.3 NA micro-field exposure tool (MET), and the data was used to determine process latitude and line edge roughness at regular intervals between cleaning cycles. Additionally, mask surface roughness and EUV reflectivity were also measured. After a total of 33 cleaning cycles, minimal degradation was observed in lithographic performance compared to the reference mask, as well as surface roughness and reflectivity.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert J. Chen, Brittany M. McClinton, Simi A. George, Yongbae Kim, Lorie-Mae Baclea-an, and Patrick P. Naulleau "Effect of repetitive acid-based cleaning on EUV mask lifetime and lithographic performance", Proc. SPIE 8166, Photomask Technology 2011, 81661O (13 October 2011); https://doi.org/10.1117/12.896975
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