Investigation of 3D patterns on EUV masks by means of scatterometry and comparison to numerical simulations

Sven Burger; Lin Zschiedrich; Jan Pomplun; Frank Schmidt; Akiko Kato; Christian Laubis; Frank Scholze

doi:10.1117/12.896839

13 October 2011 Investigation of 3D patterns on EUV masks by means of scatterometry and comparison to numerical simulations

Sven Burger, Lin Zschiedrich, Jan Pomplun, Frank Schmidt, Akiko Kato, Christian Laubis, Frank Scholze

Author Affiliations +

Proceedings Volume 8166, Photomask Technology 2011; 81661Q (2011) https://doi.org/10.1117/12.896839
Event: SPIE Photomask Technology, 2011, Monterey, California, United States

Abstract

EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations.

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Sven Burger, Lin Zschiedrich, Jan Pomplun, Frank Schmidt, Akiko Kato, Christian Laubis, and Frank Scholze "Investigation of 3D patterns on EUV masks by means of scatterometry and comparison to numerical simulations", Proc. SPIE 8166, Photomask Technology 2011, 81661Q (13 October 2011); https://doi.org/10.1117/12.896839

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