13 October 2011 Investigation of 3D patterns on EUV masks by means of scatterometry and comparison to numerical simulations
Author Affiliations +
Abstract
EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sven Burger, Sven Burger, Lin Zschiedrich, Lin Zschiedrich, Jan Pomplun, Jan Pomplun, Frank Schmidt, Frank Schmidt, Akiko Kato, Akiko Kato, Christian Laubis, Christian Laubis, Frank Scholze, Frank Scholze, } "Investigation of 3D patterns on EUV masks by means of scatterometry and comparison to numerical simulations", Proc. SPIE 8166, Photomask Technology 2011, 81661Q (13 October 2011); doi: 10.1117/12.896839; https://doi.org/10.1117/12.896839
PROCEEDINGS
8 PAGES


SHARE
Back to Top