13 October 2011 Efficient large volume data preparation for electron beam lithography for sub-45nm node
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Abstract
A new correction approach was developed to improve the process window of electron beam lithography and push its resolution at least one generation further using the same exposure tool. An efficient combination of dose and geometry modulation is implemented in the commercial data preparation software, called Inscale®, from Aselta Nanographics. Furthermore, the electron Resolution Improvement Feature (eRIF) is tested, which is based on the dose modulation and multiple-pass exposure, for not only overcoming the narrow resist process windows and disability of exposure tool but also more accurate correction of exposure data in the application of sub-35nm regime. Firstly, we are demonstrating the newly developed correction method through the comparison of its test exposure and the one with conventional dose modulation method. Secondly, the electron Resolution Improvement Feature is presented with the test application for complementary exposure and with the application of real design, specifically for sub-30nm nodes. Finally, we discuss the requirements of data preparation for the practical applications in e-beam lithography, especially for future technology nodes.
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Kang-Hoon Choi, Kang-Hoon Choi, Manuela Gutsch, Manuela Gutsch, Martin Freitag, Martin Freitag, Christoph Hohle, Christoph Hohle, Luc Martin, Luc Martin, Sebastien Bayle, Sebastien Bayle, Serdar Manakli, Serdar Manakli, Patrick Schiavone, Patrick Schiavone, } "Efficient large volume data preparation for electron beam lithography for sub-45nm node", Proc. SPIE 8166, Photomask Technology 2011, 816621 (13 October 2011); doi: 10.1117/12.897586; https://doi.org/10.1117/12.897586
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