13 October 2011 Exploring the impact of mask making constraints on double patterning design rules
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Abstract
In order to achieve an economical design-to-mask (DTM) development cycle in the low k1 domain, designers, lithographers, and mask makers needed to move away from many sequentially isolated developmental activities onto one collaborative environment managed by a computational lithography platform that integrates their respective ecosystems. 1,2 A successful development cycle used to be achievable by designers providing designs to lithographers, who then provided RET/OPC solutions to realize designs, but once k1 fell below a certain level, the lithographers could not provide solutions to realize some critical designs, which then required feedback to designers for further redesigns requiring further lithographic evaluation cycles. So collaboration and automations between lithographers and designers became necessary to reduce feedback loops and development cycle time. RET and design solutions also were impacted by mask making, and so mask maker's feedback on MRC and other constraints needed to be integrated for all three groups to achieve an economical DTM. As many lithographers attempted to print sub-80 nm pitches with 193 nm wavelength, it became necessary to use double patterning to achieve feature resolution. With the effective pitch doubling on each split layer, there could be significant increased design rule freedom for certain complex design situations. Using an integrated computational lithographic platform, one could find design space sweet spots that could further achieve optimal lithographic performance. In this paper, the optimization of design rules (DRD) for double pattern designs (~60 nm pitch) was explored with the mask maker's perspective. The experiment to be presented started with a 2x nm design set of clips. Each set of clips underwent size/width/space/pitch variations to generate a design space, and then each design space underwent SMO with an inverse lithography technology (ILT) engine using various mask MRC's and manhattan segmentations. The lithographic results were analyzed with respect to MRC and manhattan segmentation to show their impact on design space and mask solutions.
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Thuc Dam, Thuc Dam, Robert Sinn, Robert Sinn, Paul Rissman, Paul Rissman, Bob Gleason, Bob Gleason, } "Exploring the impact of mask making constraints on double patterning design rules", Proc. SPIE 8166, Photomask Technology 2011, 816629 (13 October 2011); doi: 10.1117/12.896963; https://doi.org/10.1117/12.896963
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