13 October 2011 EUV multilayer defect compensation (MDC) by absorber pattern modification: from theory to wafer validation
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Abstract
According to the ITRS roadmap, mask defects are among the top technical challenges to introduce extreme ultraviolet (EUV) lithography into production. Making a multilayer defect-free extreme ultraviolet (EUV) blank is not possible today, and is unlikely to happen in the next few years. This means that EUV must work with multilayer defects present on the mask. The method proposed by Luminescent is to compensate effects of multilayer defects on images by modifying the absorber patterns. The effect of a multilayer defect is to distort the images of adjacent absorber patterns. Although the defect cannot be repaired, the images may be restored to their desired targets by changing the absorber patterns. This method was first introduced in our paper at BACUS 2010, which described a simple pixel-based compensation algorithm using a fast multilayer model. The fast model made it possible to complete the compensation calculations in seconds, instead of days or weeks required for rigorous Finite Domain Time Difference (FDTD) simulations. Our SPIE 2011 paper introduced an advanced compensation algorithm using the Level Set Method for 2D absorber patterns. In this paper the method is extended to consider process window, and allow repair tool constraints, such as permitting etching but not deposition. The multilayer defect growth model is also enhanced so that the multilayer defect can be "inverted", or recovered from the top layer profile using a calibrated model.
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Linyong Pang, Peter Hu, Masaki Satake, Vikram Tolani, Danping Peng, Ying Li, Dongxue Chen, "EUV multilayer defect compensation (MDC) by absorber pattern modification: from theory to wafer validation", Proc. SPIE 8166, Photomask Technology 2011, 81662E (13 October 2011); doi: 10.1117/12.897215; https://doi.org/10.1117/12.897215
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