EUVL lithography using high resolution step and scan systems operating at 13.5nm is being inserted in leading
edge production lines for memory and logic devices. These tools use mirror optics and either laser produced
plasma (LPP) or discharge produced plasma (DPP) sources along with reflective reduction masks to
image circuit features. These tools show their capability to meet the challenging device requirements for
imaging and overlay. Next generation scanners with resolution and overlay capability to produce 1X nm (10 nm
class) memory and logic devices are in preparation. Challenges remain for EUVL, the principal of which are
increasing source power enabling high productivity, building a volume mask business encouraging rapid
learning cycles, and improving resist performance so it is capable of sub 20nm resolution.