13 October 2011 Study on EUV photomask resist stripping and cleaning
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Any cleaning technology for state-of-the-art photo masks requires that pattern damage does not occur and optical characteristics do not change. Particularly with EUV masks, an important challenge is to suppress/prevent changes to the optical characteristics of ruthenium (Ru) film that generates when resist is removed (separated). This report illustrates a model explaining why optical characteristics change when conventional resist removal (separation) technologies are used on EUV mask. It also proposes a new resist removal technology that allows resist to be removed without any optical damage to Ru films.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsutomu Kikuchi, Tsutomu Kikuchi, Yuji Nagashima, Yuji Nagashima, Haruka Nakano, Haruka Nakano, Takahiko Wakatsuki, Takahiko Wakatsuki, Kensuke Demura, Kensuke Demura, Yoshiaki Kurokawa, Yoshiaki Kurokawa, Mikio Nonaka, Mikio Nonaka, "Study on EUV photomask resist stripping and cleaning", Proc. SPIE 8166, Photomask Technology 2011, 81662Q (13 October 2011); doi: 10.1117/12.899281; https://doi.org/10.1117/12.899281


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