14 October 2011 Nanomachining repair for the latest reticle enhancement technologies
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Proceedings Volume 8166, Photomask Technology 2011; 81662Y (2011); doi: 10.1117/12.898504
Event: SPIE Photomask Technology, 2011, Monterey, California, United States
Abstract
A number of new RET's have come to significant adoption in advanced lithography recently, extending technology trends that have allowed the use of 193 nm wavelengths for nodes well beyond their intended limits. These enhancement technologies include Computational Lithography (CL) techniques such as Source-Mask Optimization (SMO), and use of innovative materials such as Opaque MoSi on Glass (OMOG). These new techniques are of particular focus for examination of their applicability to nanomachining photomask repair. Historically comparative repair results are shown for the OMOG absorbers which can contain a multi-layer potentially in combination with quartz over-etching for phase correction. The implementation of nanomachining for CL/SMO photomasks encompasses a larger set of new technologies introduced in a nanomachining repair tool. These include tip shape de-convolution for improved accuracy and reproducibility of large complex patterns - many of which are non-orthogonal, and automated import of mask design data to seed the repair polygon for a pattern which may be unique on the entire mask area (i.e. no pattern reference).
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Tod Robinson, Daniel Yi, David Brinkley, Ken Roessler, Roy White, Ron Bozak, Mike Archuletta, Bernie Arruza, "Nanomachining repair for the latest reticle enhancement technologies", Proc. SPIE 8166, Photomask Technology 2011, 81662Y (14 October 2011); doi: 10.1117/12.898504; https://doi.org/10.1117/12.898504
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KEYWORDS
Photomasks

Atomic force microscopy

Source mask optimization

Manufacturing

Computational lithography

Lithography

Reticles

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