13 October 2011 Attenuated phase-shift mask with high tolerance for 193nm radiation damage
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In the semiconductor technology using the 193nm ArF excimer laser, the problem of radiation damage on photomask becomes more serious. This phenomenon is regarded as serious issue for semiconductor device fabrication. Some approaches have been tried to prevent the radiation damage. One of reports indicates that the radiation damage can be reduced by using an exposure tool with ultra clean extreme dry air [1]. However, it is difficult to adopt dry air into all exposure tools due to high cost. In our previous work, two facts were ascertained; radiation damage is caused by MoSi film oxidation, and depends on MoSi film composition [2]. In this paper, radiation damage was tried to decrease by MoSi film modification of att. PSM. MoSi film composition for PSM is optimized in consideration of cleaning durability, mask defect repair and processability. The new PSM is named AID (Anti Irradiation Damage). Radiation damage of AID PSM can be improved by 40[%] from conventional PSM. Cleaning durability can be also improved by AID PSM. The other evaluation items such as CD performance, cross section, defect level and repair, are equal between the AID PSM and conventional one. Additionally, the lithography performances by simulation of AID PSM are equivalent with that of conventional PSM. Therefore, it can be expected that there is no difficulty in converting conventional PSM into AID PSM. From these evaluation results, development of AID PSM was completed, and preparation for production is now going.
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Taichi Yamazaki, Taichi Yamazaki, Ryohei Gorai, Ryohei Gorai, Yosuke Kojima, Yosuke Kojima, Takashi Haraguchi, Takashi Haraguchi, Tsuyoshi Tanaka, Tsuyoshi Tanaka, Ryuji Koitabashi, Ryuji Koitabashi, Yukio Inazuki, Yukio Inazuki, Hiroki Yoshikawa, Hiroki Yoshikawa, } "Attenuated phase-shift mask with high tolerance for 193nm radiation damage", Proc. SPIE 8166, Photomask Technology 2011, 81663V (13 October 2011); doi: 10.1117/12.898984; https://doi.org/10.1117/12.898984

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