3 October 2011 Optimization of ion-assisted ITO films by design of experiment
Author Affiliations +
In this work we want to demonstrate how the methodology of Design of Experiment (DOE) can be used for the development of ion-assisted ITO films deposited at low temperatures. The optimization method allows us to identify the process parameters, which yield films with high transmittance and low resistivity. The article will show the results obtained for transmittance and resistivity. Furthermore, the dispersion of the refractive index and the extinction coefficient will be determined as well as the surface roughness. In ITO there is a trade-off between transmittance / absorbance and sheet resistance. Virtually absorption free films could be obtained with a resistivity of 3.2 μΩm, whereas the lowest resistivity (2.7 μΩm) yielded a transmittance, which was reduced by a few percent.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Silvia Schwyn Thöny, Silvia Schwyn Thöny, Jürgen Buchholz, Jürgen Buchholz, Stephan Waldner, Stephan Waldner, "Optimization of ion-assisted ITO films by design of experiment", Proc. SPIE 8168, Advances in Optical Thin Films IV, 81681H (3 October 2011); doi: 10.1117/12.896398; https://doi.org/10.1117/12.896398

Back to Top