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3 October 2011Residual stress analysis for oxide thin film deposition on flexible substrate using finite element method
Residual or internal stresses directly affect a variety of phenomena including adhesion, generation of crystalline defects,
perfection of epitaxial layers and formation of film surface growths such as hillocks and whiskers. Sputtering oxide films
with high density promote high compressive stress, and it offers researchers a reference if the value of residual stress
could be analyzed directly. Since, the study of residual stress of SiO2 and Nb2O5 thin film deposited by DC magnetron
sputtered on hard substrate (BK7) and flexible substrate (PET and PC). A finite element method (FEM) with an
equivalent-reference-temperature (ERT) technique had been proposed and used to model and evaluate the intrinsic
strains of layered structures. The research has improved the equivalent reference temperature (ERT) technique of the
simulation of intrinsic strain for oxygen film. The results have also generalized two models connecting to the lattice
volume to predict the residual stress of hard substrate and flexible substrate with error of 3% and 6%, respectively.
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Hsi-Chao Chen, Chen-Yu Huang, Ssu-Fan Lin, Sheng-Hui Chen, "Residual stress analysis for oxide thin film deposition on flexible substrate using finite element method," Proc. SPIE 8168, Advances in Optical Thin Films IV, 816820 (3 October 2011); https://doi.org/10.1117/12.897021