4 October 2011 Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects
Author Affiliations +
Abstract
Extreme ultraviolet (EUV) - lithography at a wavelength around 13.5 nm is considered as the most promising successor of optical projection lithography. This paper reviews simulation models for EUV lithography. Resist model parameters are calibrated with experimental data. The models are applied for the investigation of the impact of mask multilayer defects on the lithographic process.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Erdmann, Andreas Erdmann, Peter Evanschitzky, Peter Evanschitzky, Feng Shao, Feng Shao, Tim Fühner, Tim Fühner, Gian F. Lorusso, Gian F. Lorusso, Eric Hendrickx, Eric Hendrickx, Mieke Goethals, Mieke Goethals, Rik Jonckheere, Rik Jonckheere, Tristan Bret, Tristan Bret, Thorsten Hofmann, Thorsten Hofmann, } "Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects", Proc. SPIE 8171, Physical Optics, 81710M (4 October 2011); doi: 10.1117/12.896813; https://doi.org/10.1117/12.896813
PROCEEDINGS
16 PAGES


SHARE
Back to Top