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4 October 2011 Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects
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Abstract
Extreme ultraviolet (EUV) - lithography at a wavelength around 13.5 nm is considered as the most promising successor of optical projection lithography. This paper reviews simulation models for EUV lithography. Resist model parameters are calibrated with experimental data. The models are applied for the investigation of the impact of mask multilayer defects on the lithographic process.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Erdmann, Peter Evanschitzky, Feng Shao, Tim Fühner, Gian F. Lorusso, Eric Hendrickx, Mieke Goethals, Rik Jonckheere, Tristan Bret, and Thorsten Hofmann "Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects", Proc. SPIE 8171, Physical Optics, 81710M (4 October 2011); https://doi.org/10.1117/12.896813
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