23 August 2011 Photoinduced effect in Te-As-Se thin films for photonic applications
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Proceedings Volume 8173, Photonics 2010: Tenth International Conference on Fiber Optics and Photonics; 81731C (2011) https://doi.org/10.1117/12.899994
Event: International Conference on Fiber Optics and Photonics, 2010, Guwahati, India
Abstract
Amorphous TexAs40Se60-x (x = 0, 10) thin films were prepared using thermal evaporation technique onto cleaned glass substrate at room temperature, and then exposed to UV-VIS light (having accordance with ASTM standards CIE 85 Table 4) using a Xenon lamp for two hours duration. Thicknesses of the films were measured using a stylus based surface profilometer. Structural analysis of the films was done using XRD measurements. Optical changes under UVVIS exposure were investigated by UV/VIS spectroscopy in wavelength range 300~900 nm. Changes in optical parameters are proposed for environmental monitoring applications. These results are compared with other range of photoexposures for some different Te-As-Se compositions in order to analyze their usability for various photonic applications.
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R. Chauhan, R. Chauhan, A. K. Srivastava, A. K. Srivastava, A. Tripathi, A. Tripathi, M. Mishra, M. Mishra, K. K. Srivastava, K. K. Srivastava, } "Photoinduced effect in Te-As-Se thin films for photonic applications", Proc. SPIE 8173, Photonics 2010: Tenth International Conference on Fiber Optics and Photonics, 81731C (23 August 2011); doi: 10.1117/12.899994; https://doi.org/10.1117/12.899994
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