3 October 2011 Hybrid backside illuminated CMOS image sensors possessing low crosstalk
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Abstract
Backside illuminated (BSI) hybrid CMOS image sensors possessing excellent spectral response (> 80% between 400nm-800nm) have been previously reported by us. Particularly challenging with BSI imagers is to combine such sensitivity, with low electrical inter-pixel crosstalk (or charge-dispersion). Employing thick bulk silicon (in BSI) to maximize red response results in large crosstalk especially for blue light. In the second generation of these imagers, we undertook the exercise of solving the crosstalk problem by a two-pronged approach: a) an optimized epitaxial substrate that was engineered to maximize the internal electric field b) high aspect ratio trenches (30 μm deep) with carefully tailored sidewall passivation. The results show that the proposed optimizations are effective in curtailing crosstalk without having a major impact on other sensor parameters.
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Padmakumar Ramachandra Rao, Koen De Munck, Kyriaki Minoglou, Joeri De Vos, Deniz Sabuncuoglu, Piet De Moor, "Hybrid backside illuminated CMOS image sensors possessing low crosstalk", Proc. SPIE 8176, Sensors, Systems, and Next-Generation Satellites XV, 81761D (3 October 2011); doi: 10.1117/12.901234; https://doi.org/10.1117/12.901234
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