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6 October 2011 Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser
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Abstract
Due to a wide transparency range (0.9-17 μm), a low absorption loss (~ 0.01 cm-1), and a laser damage threshold comparable to ZGP crystals (~ 2 J/cm2), combined with excellent nonlinear, thermal and mechanical properties, quasi-phase-matched orientation-patterned gallium arsenide (OP-GaAs) crystals are well adapted for efficient mid-infrared optical parametric oscillators (OPOs). The paper discusses the best results obtained, to our knowledge, with an OP-GaAs OPO pumped by a Qswitched 2.09 μm Ho3+:YAG laser. The compact (33 × 48 cm) high-repetition rate source developed allows to achieve 4.0 W of average output power in the 3-5 μm range at 40 kHz repetition rate with a 45 % slope efficiency and a very good beam quality (M2 < 1.8). 6.4 W were obtained at 70 kHz with a 51 % slope efficiency, and 7.7 W at 100 kHz with a 46 % slope efficiency. At 40 kHz and 70 kHz, an optical damage occurred at a fluence of 1.9 J/cm2 and 1.5 J/cm2 respectively. The power is limited by the OP-GaAs crystal thickness and is expected to be scaled in thicker samples recently fabricated.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn "Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser", Proc. SPIE 8187, Technologies for Optical Countermeasures VIII, 81870H (6 October 2011); https://doi.org/10.1117/12.898118
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