Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser

A. Hildenbrand; C. Kieleck; E. Lallier; D. Faye; A. Grisard; B. Gérard; M. Eichhorn

doi:10.1117/12.898118

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6 October 2011 Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho³⁺:YAG laser

A. Hildenbrand; C. Kieleck; E. Lallier; D. Faye; A. Grisard; B. Gérard; M. Eichhorn

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Proceedings Volume 8187, Technologies for Optical Countermeasures VIII; 81870H (2011) https://doi.org/10.1117/12.898118
Event: SPIE Security + Defence, 2011, Prague, Czech Republic

Abstract

Due to a wide transparency range (0.9-17 μm), a low absorption loss (~ 0.01 cm^-1), and a laser damage threshold comparable to ZGP crystals (~ 2 J/cm²), combined with excellent nonlinear, thermal and mechanical properties, quasi-phase-matched orientation-patterned gallium arsenide (OP-GaAs) crystals are well adapted for efficient mid-infrared optical parametric oscillators (OPOs). The paper discusses the best results obtained, to our knowledge, with an OP-GaAs OPO pumped by a Qswitched 2.09 μm Ho³⁺:YAG laser. The compact (33 × 48 cm) high-repetition rate source developed allows to achieve 4.0 W of average output power in the 3-5 μm range at 40 kHz repetition rate with a 45 % slope efficiency and a very good beam quality (M² < 1.8). 6.4 W were obtained at 70 kHz with a 51 % slope efficiency, and 7.7 W at 100 kHz with a 46 % slope efficiency. At 40 kHz and 70 kHz, an optical damage occurred at a fluence of 1.9 J/cm² and 1.5 J/cm² respectively. The power is limited by the OP-GaAs crystal thickness and is expected to be scaled in thicker samples recently fabricated.

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A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn "Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho³⁺:YAG laser", Proc. SPIE 8187, Technologies for Optical Countermeasures VIII, 81870H (6 October 2011); https://doi.org/10.1117/12.898118

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