Abstract
TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more
than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production
ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology
platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and
a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low
insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM
capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for
inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors.
Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband
imaging are presented.
