22 November 2011 Characterization of 1064nm laser-induced damage on antireflection coatings grown by atomic layer deposition
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Abstract
Damage tests were carried out to measure the laser resistance of Al2O3/TiO2 and Al2O3/HfO2 antireflection coatings at 1064nm grown by atomic layer deposition (ALD). The S-on-1 and R-on-1 damage results are given. It's interesting to find that ALD coatings damage performance seems closed to those grown by conventional e-beam evaporation process. For Al2O3/TiO2 coatings, the grown temperature will impact the damage resistance of thin films. Crystallization of TiO2 layer at higher temperature could play an importance role as absorption defects that reduced the LIDT of coatings. In addition, it is found that using inorganic compound instead of organic compound as precursors for ALD process can effective prevent residual carbon in films and will increase the LIDT of coatings.
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Zhichao Liu, Zhichao Liu, Yaowei Wei, Yaowei Wei, Songlin Chen, Songlin Chen, Jin Luo, Jin Luo, Ping Ma, Ping Ma, } "Characterization of 1064nm laser-induced damage on antireflection coatings grown by atomic layer deposition", Proc. SPIE 8190, Laser-Induced Damage in Optical Materials: 2011, 81900C (22 November 2011); doi: 10.1117/12.899053; https://doi.org/10.1117/12.899053
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