Microemitter resistor arrays are one popular approach to obtaining an infrared scene projector capable of wide
dynamic range. Typically, the array operates in a two-level architecture wherein the array resides suspended on support
legs. In the structure, the resistive films must provide the high resistivity and the resistivity can be easily controlled.
Moreover, the resistive films also must be stable at high temperature and having low temperature coefficient of
resistance (TCR). Transition metal nitrides can meet the requirement of the microemitter resistor. Among various
transition metal nitrides, HfN, ZrN and TiN films have been used as resistive films in dynamic infrared scene generation.
While compared the binary alloys above, the ternary compounds such as TiWN film has better performance. For
example, TiWN film shows higher adhesion and corrosion resistance and provides better barrier properties. In this paper,
TiWN films were deposited by reactive RF sputtering. The influence of the nitrogen partial pressure ratio on the
properties of TiWN films was studied. The results show the electrical resistivity of the TiWN films can be determined by
the nitrogen partial pressure ratio and the films have high temperature stability. In addition, long serpentine structure of
TiWN films was fabricated in order to demonstrate the application in an infrared scene projector, The arrays were
fabricated on a polyimide layer on a silicon wafer substrate or a chip by using conventional techniques for
photolithography, etching, electric plating and vacuum deposition.