8 September 2011 Uncooled IR sensor based on lateral polysilicon pn junction diode: initial results
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Abstract
These days, uncooled IR image sensors utilizing MEMS technologies have been widely studied for night vision and temperature sensing. Compared with other uncooled IR image sensor, uncooled IR image sensor utilizing p-n junction diode detector has merits of good CMOS compatibility, better mass-production, and better detecting uniformity. In this paper, we proposed a novel uncooled IR sensor based on lateral polysilicon p-n junction diode. In the CMOS process, p-type polysilicon is used for PMOS gate electrode material, while n-type polysilicon is used for NMOS gate electrode material. Due to that polysilicon diode is adopted for sensing, the silicon substrate under the microstructure can be completely removed, and a better thermal isolation and a small thermal mass can be achieved. By using the FEM software Ansys, 3D models of the silicon diode and polysilicon diode have been built for thermal simulation. Simulation results verify that a better thermal isolation can be achieved for polysilicon diode. The device was fabricated by standard CMOS process and a XeF2 post-CMOS maskless dry etching step. Measurement results of the fabricated lateral polysilicon p-n junction diode is also reported.
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De-hui Xu, Bin Xiong, Yue-lin Wang, "Uncooled IR sensor based on lateral polysilicon pn junction diode: initial results", Proc. SPIE 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, 819113 (8 September 2011); doi: 10.1117/12.900485; https://doi.org/10.1117/12.900485
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