8 September 2011 Uncooled IR sensor based on lateral polysilicon pn junction diode: initial results
Author Affiliations +
These days, uncooled IR image sensors utilizing MEMS technologies have been widely studied for night vision and temperature sensing. Compared with other uncooled IR image sensor, uncooled IR image sensor utilizing p-n junction diode detector has merits of good CMOS compatibility, better mass-production, and better detecting uniformity. In this paper, we proposed a novel uncooled IR sensor based on lateral polysilicon p-n junction diode. In the CMOS process, p-type polysilicon is used for PMOS gate electrode material, while n-type polysilicon is used for NMOS gate electrode material. Due to that polysilicon diode is adopted for sensing, the silicon substrate under the microstructure can be completely removed, and a better thermal isolation and a small thermal mass can be achieved. By using the FEM software Ansys, 3D models of the silicon diode and polysilicon diode have been built for thermal simulation. Simulation results verify that a better thermal isolation can be achieved for polysilicon diode. The device was fabricated by standard CMOS process and a XeF2 post-CMOS maskless dry etching step. Measurement results of the fabricated lateral polysilicon p-n junction diode is also reported.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
De-hui Xu, De-hui Xu, Bin Xiong, Bin Xiong, Yue-lin Wang, Yue-lin Wang, } "Uncooled IR sensor based on lateral polysilicon pn junction diode: initial results", Proc. SPIE 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, 819113 (8 September 2011); doi: 10.1117/12.900485; https://doi.org/10.1117/12.900485


Thermoelectric bolometers based on silicon membranes
Proceedings of SPIE (May 29 2017)
High Density Schottky-Barrier Infrared Image Sensor
Proceedings of SPIE (August 14 1988)
Schottky Diode Based Infrared Sensors
Proceedings of SPIE (December 08 1983)
Infrared position sensitive detector (IRPSD)
Proceedings of SPIE (April 30 2008)
Infrared internal emission detectors
Proceedings of SPIE (December 09 1992)

Back to Top