19 August 2011 Investigation on the third-order optical nonlinearity of CdS using 4f coherent imaging technique with phase object
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Abstract
The third-order optical nonlinearities of semiconductor CdS are investigated using 4f nonlinear image technique with phase object at 745 nm. The measurement method is based on the 4f coherent optical processor system in Fourier optics. The nonlinear parameters of sample can be verified by numerical fitting the nonlinear image at the output plane of 4f system which obtained by a CCD camera. Using one-single-shot, the two-photon absorption coefficient β and nonlinear refraction index n2 of the CdS which arranged at the Fourier plane are determined simultaneously. The experimental results shows CdS has reverse saturable absorption and self-defocusing effect at 745 nm, indicating this material is a good candidate for future photonics applications.
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Zhong-guo Li, Zhong-guo Li, Chuan-xiang Yi, Chuan-xiang Yi, Shu-guang Dong, Shu-guang Dong, Ying-lin Song, Ying-lin Song, } "Investigation on the third-order optical nonlinearity of CdS using 4f coherent imaging technique with phase object", Proc. SPIE 8192, International Symposium on Photoelectronic Detection and Imaging 2011: Laser Sensing and Imaging; and Biological and Medical Applications of Photonics Sensing and Imaging, 81920V (19 August 2011); doi: 10.1117/12.899384; https://doi.org/10.1117/12.899384
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