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8 September 2011 Fabrication and low temperature characteristics of InGaAs detector
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Abstract
Planar InGaAs/InP p-i-n photodiodes have been successfully fabricated, and its spectral response, current-voltage characteristic, photogenerated signal and noise were measured at 300 K and 77 K with the blackbody temperature fixed at 900 K. It was found that the measured voltage signals reduced from 14.0 mV to 7.0 mV when the temperature decreased from 300 K to 77 K. All measured results at 77 K show that the peak voltage responsivity of InGaAs detector is Rvp= 2.41×107 V/W, and its peak detectivity Dp* = 1.51×1012 (cmHz)1/2/W. Measurement of transmittance spectral indicated that the transmittance rate is over 80% at middle wavelength range. The results show that short wavelength infrared InGaAs detector can be integrated with middle wavelength infrared detector to form dual-band detector worked at liquid nitrogen temperature.
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Yanqiu Lv and Qingduan Meng "Fabrication and low temperature characteristics of InGaAs detector", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81930H (8 September 2011); https://doi.org/10.1117/12.897576
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