The electrical characteristics of the HgInTe crystal and Pt/HgInTe Schottky contacts

X. L. Zhang; W. G. Sun; L. Zhang; Z. X. Lu

doi:10.1117/12.899130

8 September 2011 The electrical characteristics of the HgInTe crystal and Pt/HgInTe Schottky contacts

X. L. Zhang, W. G. Sun, L. Zhang, Z. X. Lu

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 81930O (2011) https://doi.org/10.1117/12.899130
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

Photodiodes designed to be sensitive in the region 1.4~1.7μm and obtained by vacuum magnetron sputtering of the Pt layer on the surface of the HgInTe single crystal are studied. Temperature dependence on electrical characteristics of the crystal and the Schottky diodes were investigated in a temperature range from 120K to260K. The current-voltage characteristics of the diodes show excellent rectification behavior. Temperature dependence on the ideality factor and apparent barrier height was determined, including the effect of series resistance. The evaluated ideality factor was observed to decrease from 2.93 to 1.42, while the apparent barrier height is 0.563 in this temperature range. The temperature dependence of the forward characteristics can be well explained by thermionic emission theory. The measured barrier height for Pt on HgInTe is similar to the value reported for both ITO and Au rectifying contacts on this material. A possible mechanism of the correlation of the ideality factor and barrier height has been proposed.

Citation Download Citation

X. L. Zhang, W. G. Sun, L. Zhang, and Z. X. Lu "The electrical characteristics of the HgInTe crystal and Pt/HgInTe Schottky contacts", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81930O (8 September 2011); https://doi.org/10.1117/12.899130

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