8 September 2011 As2/Ga flux ratios and low-temperature annealing dependence of Ga1-xMnxAs films by x-ray absorption spectroscopy
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Abstract
We have measured room temperature x-ray absorption spectroscopy (XAS) at the Mn L2,3edges on ferromagnetic Ga1-xMnxAs films prepared under different As2/Ga flux ratios. A growth condition relative energy shift (ΔE) at L2 peak was observed, the results suggest that the formation of antiferromagnetic Mn-As complex under As-rich growth conditions and the energy shift can be weakened even eliminated by post-growth low temperature (LT) annealing. The intensity of XAS spectrum was promoted after post-growth annealing, and the effect of annealing was also influenced by growth conditions.
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X. C. Cao, X. C. Cao, G. S. Yao, G. S. Yao, L. X. Zhang, L. X. Zhang, L. W. Wang, L. W. Wang, Y. Q. Lv, Y. Q. Lv, Z. Y. Peng, Z. Y. Peng, } "As2/Ga flux ratios and low-temperature annealing dependence of Ga1-xMnxAs films by x-ray absorption spectroscopy", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81931F (8 September 2011); doi: 10.1117/12.899858; https://doi.org/10.1117/12.899858
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