8 September 2011 Investigation on the optical properties of sulfur-doped diamond thin films
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Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 819320 (2011); doi: 10.1117/12.900241
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China
Abstract
Sulfur-doped diamond thin films have been synthesized using CH4/H2/Ar/H2S gas mixture by hot filament chemical vapor deposition (HFCVD) technique. The optical properties of the films are investigated by SEM and Raman spectra. The Gaussian line shape is used in the curve fitting for the Raman spectra. Results show that the ID/IG presents the trend of first increase and then decrease with the increase of S/C ratio, however, an upward shift of the diamond peak is observed. This implies residual stress in the sulfur-doped diamond thin films. Moreover, optimum experimental conditions are proposed.
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Yongjie Wang, Qingxun Zhao, Zengqian Yin, Zhanlong Zhao, "Investigation on the optical properties of sulfur-doped diamond thin films", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 819320 (8 September 2011); doi: 10.1117/12.900241; https://doi.org/10.1117/12.900241
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KEYWORDS
Diamond

Raman spectroscopy

Thin films

Sulfur

Optical properties

Scanning electron microscopy

Chemical species

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