8 September 2011 High quality mid-infrared InAs film grown on (100) GaSb substrate by LPE using a ternary melt
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Abstract
InAs film has been successfully grown on (100) GaSb substrate using a ternary In-As-Sb melt by liquid phase epitaxy (LPE). The high resolution X-ray diffraction (HRXRD) and Rocking curve showed the film was single crystalline InAs with high quality. The Fourier transform infrared (FTIR) transmission spectrum revealed that the cutoff wavelength was about 3.8 μm at room temperature. The electron mobility at 300 K is higher than 2×10 4cm2/Vs. It indicates that the structure of InAs/GaSb prepared by LPE has a potential for mid-infrared devices.
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Changhong Sun, Shuhong Hu, Qiwei Wang, Jie Wu, Ning Dai, "High quality mid-infrared InAs film grown on (100) GaSb substrate by LPE using a ternary melt", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932L (8 September 2011); doi: 10.1117/12.900489; https://doi.org/10.1117/12.900489
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