Study of the characteristics of VLWIR HgCdTe photovoltaic detectors in variable-area diode test structures

Xiaohui Xie; Hua Hua; Guangyin Qiu; Qingjun Liao; Xiaoning Hu

doi:10.1117/12.900711

8 September 2011 Study of the characteristics of VLWIR HgCdTe photovoltaic detectors in variable-area diode test structures

Xiaohui Xie, Hua Hua, Guangyin Qiu, Qingjun Liao, Xiaoning Hu

Author Affiliations +

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 819335 (2011) https://doi.org/10.1117/12.900711
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

This paper aims to analysis the characteristics of VLWIR HgCdTe detectors with n-on-p implanted planar junction. We use the variable area test structures, which are used as an important tool to access the quality of the material, process and surface passivation in HgCdTe device technology. Through analyzing the relation between the inverse of the zero-bias resistance-area product of a diode and its perimeter-to-area ratio, we can distinguish the contributions of bulk and surface effects, and calculate the minority carrier diffusion length, which can reflect the conditions of the HgCdTe epitaxy. According to the results, we find the VLWIR HgCdTe detectors have abnormal current-voltage phenomenon at a low temperature, which may be the results of a parasite p-n junction. Besides, through data analysis and curves fitting, we find the surface current of the VLWIR HgCdTe diodes at 80K is nearly comparable with the bulk current.

Citation Download Citation

Xiaohui Xie, Hua Hua, Guangyin Qiu, Qingjun Liao, and Xiaoning Hu "Study of the characteristics of VLWIR HgCdTe photovoltaic detectors in variable-area diode test structures", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 819335 (8 September 2011); https://doi.org/10.1117/12.900711

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