8 September 2011 Fabrication of vanadium dioxide polycrystalline films with higher temperature coefficient of resistance
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Abstract
Vanadium Dioxide Polycrystalline Films with High Temperature Coefficient of Resistance(TCR) were fabricated by modified Ion Beam Enhanced Deposition(IBED) method. The TCR of the Un-doping VO2 was about -4%/K at room temperature after appropriate thermal annealing. The XRD results clearly showed that IBED polycrystalline VO2 films had a single [002] orientation of VO2(M). The TCR of 5at.%W and 7at.% Ta doped Vanadium Dioxide Polycrystalline Films were high up to -18%/K and -12%/K at room temperature, respectively. Using 7at.% Ta and 2at.% Ti co-doping, the TCR of the co-doped vanadium oxide film was -7%/K and without hysteresis during temperature increasing and decresing from 0-80°C. It should indicate that the W-doped vanadium dioxide films colud be used for high sensing IR detect and the Ta/Ti co-doped film without hysteresis is suitable for infrarid imaging application.
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Jinhua Li, Jinhua Li, Ningyi Yuan, Ningyi Yuan, Meiping Jiang, Meiping Jiang, Li Kun, Li Kun, } "Fabrication of vanadium dioxide polycrystalline films with higher temperature coefficient of resistance", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 819338 (8 September 2011); doi: 10.1117/12.900717; https://doi.org/10.1117/12.900717
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