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8 September 2011 Characterization of CdTe passivation layers grown by evaporation with thermal treatments
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CdTe surface passivation layers were deposited by thermal evaporation or electron beam evaporation on (111) HgCdTe epilayers. The processes of CdTe layer deposition were carried out at different temperatures from 100°C to 250°C. Furthermore, prepared samples were annealed at a temperature range between 150°C and 300°C. Directly, scanning electron microscope (SEM) was used to evaluate the CdTe passivation layers. The structures of CdTe layers and the interface of CdTe/HgCdTe were studied by scanning the cross section of the samples. The results showed that the thermal treatments could merge grain boundaries. Otherwise, the compositional properties of samples were surveyed by secondary ion mass spectroscopy (SIMS). A compact CdTe structure near the HgCdTe surface caused by heating deposition and compositional interdiffusion at CdTe/HgCdTe interface were observed. Moreover, the X-ray diffraction (XRD) curves of the layers showed that the CdTe crystal quality was improved by thermal diffusion. The experimental results showed that both heating during the deposition process and annealing after growth can effectively improve the quality of CdTe passivation layers.
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Jing-jie Xu, Hai-bin Li, Xing-guo Chen, Yan-feng Wei, Chun Lin, and Jian-rong Yang "Characterization of CdTe passivation layers grown by evaporation with thermal treatments", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81933A (8 September 2011);


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