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8 September 2011 Analysis of pn-junction degeneration in heating process for extended wavelength InGaAs detectors
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Abstract
To improve the operability and rate of final products significantly, a novel process was proposed. Detectors with cutoff wavelength at 1.7 μm and 2.4 μm were fabricated in different processes, and the electricity characteristics and spectral response were measured. The novel process was analyzed by comparing the characteristics of the detectors. The dark current and responsibility of the detectors with cutoff wavelength at 1.7 μm fabricated in the new process were improved. However, the new process has negative effect on the detectors with cutoff wavelength at 2.4 μm. The pnjunction degenerated and the leakage current increased sharply. In order to find the reasons of degeneration, the methods of Auger electron spectroscopy (AES) and scanning capacitance microscope (SCM) were used. The results indicate that the metal elements do not penetrate into the pn junction causing the sharp increase of leakage current, while the interface states due to lattice mismatch are thermally activated causing the degeneration of pn- junction.
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Yao-ming Zhu, Hong-hai Deng, Peng Wei, Xue Li, and Hai-mei Gong "Analysis of pn-junction degeneration in heating process for extended wavelength InGaAs detectors", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81933D (8 September 2011); https://doi.org/10.1117/12.900760
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