Paper
8 September 2011 The modulated photocurrent of amorphous HgCdTe thin films
Lianjie Yu, Yanli Shi, Jisheng Zhuang, Xiongjun Li, Gongrong Deng, Lili Yang, Wenjin He
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Abstract
Amorphous HgCdTe thin films were deposited on quartz substrate by RF magnetron sputtering technique. The modulated photocurrent(MPC) of amorphous HgCdTe thin films has been investigated as a function of temperature T, the excitation light intensity F, and applied electric fields EB. The results indicated that the modulated photocurrent show an activated behavior in the range of 80K-300K. The activated energy ΔEap of the modulated photocurrent was found to strongly depend on temperature, whereas it is nearly independent of the applied electric field. The exponent γ in the power law relationship (IpFγ) between excitation light intensity F and modulated photocurrent of amorphous HgCdTe thin films was obtained at different temperature. The γ depends strongly on the temperature T, but it is independence of applied electric fields EB. The values of exponent γ of amorphous HgCdTe thin films lie between 0.5 and 1.0. The results indicated a continuous distribution of localized states exists in amorphous HgCdTe thin films.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lianjie Yu, Yanli Shi, Jisheng Zhuang, Xiongjun Li, Gongrong Deng, Lili Yang, and Wenjin He "The modulated photocurrent of amorphous HgCdTe thin films", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 819341 (8 September 2011); https://doi.org/10.1117/12.900987
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KEYWORDS
Thin films

Modulation

Mercury cadmium telluride

Temperature metrology

Electroactive polymers

Quartz

Sputter deposition

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