8 September 2011 The modulated photocurrent of amorphous HgCdTe thin films
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Abstract
Amorphous HgCdTe thin films were deposited on quartz substrate by RF magnetron sputtering technique. The modulated photocurrent(MPC) of amorphous HgCdTe thin films has been investigated as a function of temperature T, the excitation light intensity F, and applied electric fields EB. The results indicated that the modulated photocurrent show an activated behavior in the range of 80K-300K. The activated energy ΔEap of the modulated photocurrent was found to strongly depend on temperature, whereas it is nearly independent of the applied electric field. The exponent γ in the power law relationship (IpFγ) between excitation light intensity F and modulated photocurrent of amorphous HgCdTe thin films was obtained at different temperature. The γ depends strongly on the temperature T, but it is independence of applied electric fields EB. The values of exponent γ of amorphous HgCdTe thin films lie between 0.5 and 1.0. The results indicated a continuous distribution of localized states exists in amorphous HgCdTe thin films.
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Lianjie Yu, Lianjie Yu, Yanli Shi, Yanli Shi, Jisheng Zhuang, Jisheng Zhuang, Xiongjun Li, Xiongjun Li, Gongrong Deng, Gongrong Deng, Lili Yang, Lili Yang, Wenjin He, Wenjin He, } "The modulated photocurrent of amorphous HgCdTe thin films", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 819341 (8 September 2011); doi: 10.1117/12.900987; https://doi.org/10.1117/12.900987
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