Study of PZT thick-film infrared detectors prepared by MEMS technology

Xiang-Peng Qiang; Gui-Wu Chuan; Bo-Luo Wen; Li-Zhang Wan; Qiang-Cao Jia

doi:10.1117/12.901859

8 September 2011 Study of PZT thick-film infrared detectors prepared by MEMS technology

Xiang-Peng Qiang, Gui-Wu Chuan, Bo-Luo Wen, Li-Zhang Wan, Qiang-Cao Jia

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 81934J (2011) https://doi.org/10.1117/12.901859
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

In this paper, a single element integrated infrared detector using screen printed lead zirconate titanate (PZT) thick films on Pt/Ti/Al₂O₃/SiO₂ coated silicon cup has been developed. The thermal insulating micro-bridge of the detector was prepared by Micro-electro-mechanical System (MEMS) technology. To increase the density of PZT ceramic thick films, cool isostatic pressing experiments had been conducted under 300MPa and 30s dwell time. The XRD pattern shows that PZT thick films possess good perovskite structure. The SEM cross section image demonstrate that the PZT film was dense and the thickness is about 25μm. The dielectric constant, loss and pyroelectric coefficient of PZT thick films prepared at optimized conditions is 1100, 1% and 1×10-8C/Kcm 2, respectively. The results indicated that the PZT thermal sensitive layer fabricated by screen printing on the Pt/Ti coated silicon cup with micro-bridge thermal insulation structure, and Al₂O₃/SiO₂ barrier layer show potential application in infrared detectors.

Citation Download Citation

Xiang-Peng Qiang, Gui-Wu Chuan, Bo-Luo Wen, Li-Zhang Wan, and Qiang-Cao Jia "Study of PZT thick-film infrared detectors prepared by MEMS technology", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81934J (8 September 2011); https://doi.org/10.1117/12.901859

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